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IXGJ40N60C2D1

IXYS
RoHS
/
Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 300W TO268
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Weight 4.500005g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFAST?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N60
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 75A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-268
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 38 ns
Test Condition 400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 210 ns
IGBT Type PT
Gate Charge 95nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 18ns/90ns
Switching Energy 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

RoHS Status RoHS Compliant

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