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IXER60N120

IXYS
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IXYS SEMICONDUCTOR IXER60N120 IGBT Single Transistor, 95 A, 2.1 V, 375 W, 1.2 kV, ISOPLUS-247, 3 Pins
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 375W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 50ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 95A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 130 ns
Test Condition 600V, 60A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 710 ns
IGBT Type NPT
Gate Charge 350nC
Switching Energy 7.2mJ (on), 4.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant
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