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APT20GF120BRDQ1G

Microsemi Corporation
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 36A 200W TO247
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 36A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 36A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 19 ns
Test Condition 800V, 15A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Turn Off Time-Nom (toff) 255 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 10ns/120ns
Switching Energy 895μJ (on), 840μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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