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IXGR50N60B2

IXYS
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 68A 200W ISOPLUS247
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 247
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*50N60
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 68A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 43 ns
Test Condition 480V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Turn Off Time-Nom (toff) 430 ns
Gate Charge 140nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 18ns/190ns
Switching Energy 550μJ (off)

Compliance

RoHS Status RoHS Compliant

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