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IXGP30N60C2

IXYS
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 70A 190W TO220
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HiPerFAST?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 190W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 190W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 30 ns
Test Condition 400V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Turn Off Time-Nom (toff) 250 ns
IGBT Type PT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 13ns/70ns
Switching Energy 190μJ (off)

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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