IXGR32N170H1

IXYS

RoHS

Package ISOPLUS247?

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description IGBT 1700V 38A 200W ISOPLUS247

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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Compliance

REACH SVHC No SVHC

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Published 2004

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Additional Feature UL RECOGNIZED

Subcategory Insulated Gate BIP Transistors

Max Power Dissipation 200W

Base Part Number IXG*32N170

Pin Count 3

Qualification Status Not Qualified

Number of Elements 1

Polarity NPN

Element Configuration Single

Case Connection ISOLATED

Input Type Standard

Power - Max 200W

Transistor Application POWER CONTROL

Rise Time 250ns

Collector Emitter Voltage (VCEO) 1.7kV

Max Collector Current 38A

Reverse Recovery Time 230 ns

JEDEC-95 Code TO-247AD

Collector Emitter Breakdown Voltage 1.7kV

Voltage - Collector Emitter Breakdown (Max) 1700V

Collector Emitter Saturation Voltage 3.5V

Turn On Time 90 ns

Test Condition 1360V, 21A, 2.7 Ω, 15V

Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 21A

Turn Off Time-Nom (toff) 920 ns

IGBT Type NPT

Gate Charge 155nC

Current - Collector Pulsed (Icm) 200A

Td (on/off) @ 25°C 45ns/270ns

Switching Energy 10.6mJ (off)

Gate-Emitter Voltage-Max 20V

Gate-Emitter Thr Voltage-Max 5V

Fall Time-Max (tf) 500ns

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