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IXGR60N60B2

IXYS
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 250W ISOPLUS247
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 100ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 64 ns
Test Condition 400V, 50A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 550 ns
IGBT Type PT
Gate Charge 170nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 28ns/160ns
Switching Energy 1mJ (off)

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