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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 15A 56W TO220
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 56W
Base Part Number STGP6
Pin Count 3
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 7A
Reverse Recovery Time 21ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 15A
Turn On Time 17.3 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Turn Off Time-Nom (toff) 222 ns
Gate Charge 13.6nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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