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GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage
RoHS
/
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 400V 600MW 8TSSOP
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Technical Details

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 600mW
Input Type Standard
Power - Max 600mW
Collector Emitter Voltage (VCEO) 2.9V
Collector Emitter Breakdown Voltage 400V
Voltage - Collector Emitter Breakdown (Max) 400V
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 150A
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 1.7μs/2μs

Compliance

RoHS Status RoHS Compliant

Alternative Model

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