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IXGB75N60BD1

IXYS
RoHS
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Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 120A 360W PLUS264
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFAST?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 360W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 360W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 50ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 133 ns
Test Condition 480V, 75A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn Off Time-Nom (toff) 600 ns
Gate Charge 248nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 62ns/220ns
Switching Energy 3.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V

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