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IRG7PH42U-EP

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 90A 385W TO247AD
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Inventory: 11084
Minimum: 1
Total Price: USD $3.46
Unit Price: USD $3.465
≥1 USD $3.465

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 385W
Base Part Number IRG7PH42
Rise Time-Max 41ns
Element Configuration Single
Power Dissipation 385W
Input Type Standard
Turn On Delay Time 25 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 229 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 90A
Reverse Recovery Time 153 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench
Gate Charge 157nC
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 86ns

Dimensions

Height 20.7mm
Length 15.87mm
Width 5.3086mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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