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NGB8202NT4G

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description SINGLE IGBT, 440V - More Details
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Inventory: 12753
Minimum: 1
Total Price: USD $1.56
Unit Price: USD $1.558095
≥1 USD $1.558095
≥10 USD $1.277798
≥100 USD $1.237898
≥500 USD $1.197998
≥1000 USD $1.158098

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NGB8202
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 8000 ns
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Logic
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 440V
Max Breakdown Voltage 440V
Turn On Time 6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000 ns

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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