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IXGX40N60BD1
IXYSRoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 250W PLUS247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFAST?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Test Condition 480V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Turn Off Time-Nom (toff) 570 ns
Gate Charge 116nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 25ns/180ns
Switching Energy 2.7mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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