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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1000V 60A 412W TO247-3
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Inventory: 68124
Minimum: 1
Total Price: USD $2.41
Unit Price: USD $2.410952
≥1 USD $2.410952
≥10 USD $2.340042
≥100 USD $2.269131
≥500 USD $2.180493

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 412W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 412W
Case Connection COLLECTOR
Input Type Standard
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage 1.75V
Test Condition 600V, 30A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 988.4 ns
IGBT Type Trench Field Stop
Gate Charge 209nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/846ns
Switching Energy 2.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
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