SGB06N60ATMA1

Infineon Technologies

RoHS

Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-263

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material SILICON

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Published 2006

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Additional Feature LOW CONDUCTION LOSS

Max Power Dissipation 68W

Terminal Form GULL WING

Pin Count 3

JESD-30 Code R-PSSO-G2

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Power - Max 68W

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Collector Emitter Voltage (VCEO) 600V

Max Collector Current 12A

Collector Emitter Breakdown Voltage 600V

Turn On Time 41 ns

Test Condition 400V, 6A, 50 Ω, 15V

Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 6A

Turn Off Time-Nom (toff) 318 ns

IGBT Type NPT

Gate Charge 32nC

Current - Collector Pulsed (Icm) 24A

Td (on/off) @ 25°C 25ns/220ns

Switching Energy 215μJ

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