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TIG111BF

ON Semiconductor
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors HIGH POWER SWITCHING
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2W
Pin Count 3
Operating Temperature (Max) 150°C
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 2W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 23A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 250 ns
Test Condition 300V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Turn Off Time-Nom (toff) 360 ns
IGBT Type NPT
Gate Charge 63nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 43ns/175ns
Gate-Emitter Thr Voltage-Max 6V

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