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IRG7PH42UD1MPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 85A 313W TO247AD
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Inventory: 7161
Minimum: 1
Total Price: USD $1.18
Unit Price: USD $1.175671
≥1 USD $1.175671
≥10 USD $1.109126
≥100 USD $1.046345
≥500 USD $0.987117
≥1000 USD $0.93124

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 313W
Element Configuration Single
Input Type Standard
Power - Max 313W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench
Gate Charge 270nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/270ns
Switching Energy 1.21mJ (off)
Gate-Emitter Thr Voltage-Max 6V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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