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IRGR2B60KDTRPBF

Infineon Technologies
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 6.3A 35W DPAK
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 35W
Base Part Number IRGR2B60
Rise Time-Max 25ns
Element Configuration Single
Input Type Standard
Power - Max 35W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 6.3A
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 2A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2A
IGBT Type NPT
Gate Charge 12nC
Current - Collector Pulsed (Icm) 8A
Td (on/off) @ 25°C 11ns/150ns
Switching Energy 74μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 75ns

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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