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IRG7PSH54K10DPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 120A 520W TO274AA
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Inventory: 7244
Minimum: 1
Total Price: USD $8.76
Unit Price: USD $8.75952
≥1 USD $8.75952

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 520W
Rise Time-Max 105ns
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 65A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 120A
Collector Emitter Saturation Voltage 2.4V
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Gate Charge 435nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 110ns/490ns
Switching Energy 4.8mJ (on), 2.8mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 90ns

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Weight 38.000013g

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