APT30GS60BRDLG

Microsemi Corporation

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Transistor Element Material SILICON

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 1999

JESD-609 Code e1

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation 250W

Pin Count 3

JESD-30 Code R-PSFM-T3

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Power - Max 250W

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Collector Emitter Voltage (VCEO) 600V

Max Collector Current 54A

JEDEC-95 Code TO-247AD

Collector Emitter Breakdown Voltage 600V

Turn On Time 45 ns

Test Condition 400V, 30A, 9.1 Ω, 15V

Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A

Turn Off Time-Nom (toff) 412 ns

IGBT Type NPT

Gate Charge 145nC

Current - Collector Pulsed (Icm) 113A

Td (on/off) @ 25°C 16ns/360ns

Switching Energy 570μJ (off)

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