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IRGS4615DTRRPBF

Infineon Technologies
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 23A 99W D2PAK
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Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 99W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 15A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 23A
Collector Emitter Saturation Voltage 2V
Test Condition 400V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A
Gate Charge 19nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 30ns/95ns
Switching Energy 70μJ (on), 145μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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