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IRG8B08N120KDPBF

Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description DIODE 1200V 8A TO-220
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 89W
Reach Compliance Code unknown
Input Type Standard
Power - Max 89W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 15A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 5A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Gate Charge 45nC
Td (on/off) @ 25°C 20ns/160ns
Switching Energy 300μJ (on), 300μJ (off)

Compliance

RoHS Status RoHS Compliant

Alternative Model

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