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IRG8CH29K10F
Infineon TechnologiesRoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V ULTRA FAST DIE
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Technical
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Subcategory Insulated Gate BIP Transistors
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Collector Current-Max (IC) 25A
Gate Charge 160nC
Td (on/off) @ 25°C 40ns/245ns
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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