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STGB10M65DF2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description STMICROELECTRONICS STGB10M65DF2 IGBT Single Transistor, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 Pins
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Pricing & Ordering
Inventory: 989
Minimum: 1
Total Price: USD $2
Unit Price: USD $1.99584
≥1 USD $1.99584
≥10 USD $1.659504
≥100 USD $1.321228
≥500 USD $1.117929

Technical Details

Supply Chain

Factory Lead Time 30 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 115W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB10
Element Configuration Single
Input Type Standard
Power - Max 115W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 20A
Reverse Recovery Time 96 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.55V
Max Breakdown Voltage 650V
Test Condition 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 19ns/91ns
Switching Energy 120μJ (on), 270μJ (off)

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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