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Transistors - IGBTs - Single
GPI040A060MN-FD

GPI040A060MN-FD

RoHS

RoHS compliant

Package TO-3

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description IGBT 600V 80A 231W TO3PN

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-3

Supplier Device Package TO-3PN

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Input Type Standard

Power - Max 231W

Reverse Recovery Time 60ns

Voltage - Collector Emitter Breakdown (Max) 600V

Current - Collector (Ic) (Max) 80A

Test Condition 400V, 40A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A

IGBT Type Trench Field Stop

Gate Charge 173nC

Current - Collector Pulsed (Icm) 120A

Td (on/off) @ 25°C 35ns/85ns

Switching Energy 1.46mJ (on), 540μJ (off)

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

Central Semiconductor

ON Semiconductor

Rochester Electronics, LLC

Rochester Electronics, LLC

Taiwan Semiconductor Corporation

Vishay Semiconductor Diodes Division

Vishay Semiconductor Diodes Division

1N5253B (DO-35)

Microsemi Corporation

Diodes Incorporated

Rochester Electronics, LLC

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