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IXYY8N90C3

IXYS
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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Inventory: 256
Minimum: 1
Total Price: USD $2.99
Unit Price: USD $2.99376
≥1 USD $2.99376
≥10 USD $2.372564
≥100 USD $2.033595
≥500 USD $1.80764
≥1000 USD $1.547792
≥3000 USD $1.457416

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 20A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 39 ns
Test Condition 450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Turn Off Time-Nom (toff) 238 ns
Gate Charge 13.3nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 16ns/40ns
Switching Energy 460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V

Compliance

RoHS Status ROHS3 Compliant
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