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Transistors - Bipolar (BJT) - RF
NE685M13-A

NE685M13-A

RoHS

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Package SOT-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description RF TRANS NPN 6V 12GHZ M13

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Inventory: 8873

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case SOT-3

Number of Pins 13

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 140mW

Base Part Number NE685

Element Configuration Single

Transistor Type NPN

Collector Emitter Voltage (VCEO) 6V

Max Collector Current 30mA

DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA 3V

Collector Emitter Breakdown Voltage 6V

Frequency - Transition 12GHz

Emitter Base Voltage (VEBO) 2V

hFE Min 140

Continuous Collector Current 30mA

Noise Figure (dB Typ @ f) 1.5dB ~ 2.5dB @ 2GHz

Alternative Model

IRFU3518-701PBF

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Microsemi Corporation

MBRB15H45CTHE3_A/I

Vishay Semiconductor Diodes Division

Comchip Technology

Vishay Semiconductor Diodes Division

Vishay Semiconductor Diodes Division

ROHM Semiconductor

Diodes Incorporated

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