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NE85634-A

CEL
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 12V 6.5GHZ SOT89
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Technical Details

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 12V
Max Power Dissipation 1.2W
Current Rating 100mA
Frequency 6.5GHz
Base Part Number NE85634
Power Dissipation 2W
Output Power 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 9dB
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 120
Continuous Collector Current 20mA
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz

Dimensions

Height 1.5mm
Length 4.5mm
Width 2.5mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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