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RoHS
RoHS RoHS compliant
Package PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description TRANSISTOR RF POWER N-CH 80V 9A
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Inventory: 3710
Minimum: 1
Total Price: USD $78.02
Unit Price: USD $78.022935
≥1 USD $78.022935
≥10 USD $73.606542
≥100 USD $69.440131
≥500 USD $65.509561
≥1000 USD $61.801468

Technical Details

Physical

Mount Surface Mount
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins 4

Technical

Packaging Tray
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 165°C
Min Operating Temperature -65°C
Voltage - Rated 80V
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 79W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Current Rating 9A
Frequency 960MHz
Base Part Number LET9045
Pin Count 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection SOURCE
Current - Test 300mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 15V
Max Output Power 59W
Drain Current-Max (Abs) (ID) 9A
DS Breakdown Voltage-Min 80V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Power Gain 17.5dB

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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