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BF1208D,115

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL GATE SOD666
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Technical Details

Physical

Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN
Voltage - Rated 6V
HTS Code 8541.21.00.75
Current Rating (Amps) 30mA
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Frequency 400MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Current - Test 19mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Gain 32dB
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 0.9dB
Voltage - Test 5V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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