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BF1212,215

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL GATE 6V SOT143B
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Inventory: 50087
Minimum: 1
Total Price: USD $0.23
Unit Price: USD $0.225435
≥1 USD $0.225435
≥10 USD $0.185535
≥100 USD $0.17955
≥500 USD $0.173565
≥1000 USD $0.168578

Technical Details

Physical

Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 6V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory FET General Purpose Powers
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 400MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF1212
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode DUAL GATE, ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 12mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Gain 30dB
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.18W
Noise Figure 0.9dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF

Compliance

RoHS Status ROHS3 Compliant
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