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MRFE6VP8600HR5

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package NI-1230
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description RF MOSFET Transistors VHV6 600W NI1230H 50V
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Inventory: 76
Minimum: 1
Total Price: USD $278.26
Unit Price: USD $278.2626
≥1 USD $278.2626
≥10 USD $266.506548
≥100 USD $260.627875

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Package / Case NI-1230
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 130V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 860MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP8600
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.4A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 19.3dB
DS Breakdown Voltage-Min 130V
Power - Output 125W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1052W
Voltage - Test 50V

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