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Transistors - FETs, MOSFETs - RF
NE3516S02-A

NE3516S02-A

RoHS

/

Package 4-SMD, Flat Leads

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF

Description IC HJ-FET RF N-CH S02 4-MICROX

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Inventory: 3226

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Technical Details

Technical

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 125°C

Min Operating Temperature -65°C

Voltage - Rated 4V

Current Rating 60mA

Frequency 12GHz

Current - Test 10mA

Transistor Type N-Channel GaAs HJ-FET

Continuous Drain Current (ID) 60mA

Gate to Source Voltage (Vgs) -3V

Gain 14dB

Power - Output 165mW

Noise Figure 0.35dB

Voltage - Test 2V

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Alternative Model

BSC090N03LSGATMA1

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Microsemi Corporation

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