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MAGX-001214-250L00

M/A-Com Technology Solutions
RoHS
/
Package Ceramic
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description TRANSISTOR GAN 250W 1.2-1.4GHZ
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Technical Details

Physical

Mount Screw
Package / Case Ceramic
Number of Pins 3

Technical

Packaging Bulk
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 95°C
Min Operating Temperature -40°C
Voltage - Rated 65V
Max Power Dissipation 192W
Terminal Position DUAL
Terminal Form FLAT
Current Rating 9A
Frequency 1.2GHz~1.4GHz
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 250mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 175V
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
Continuous Drain Current (ID) 9.1A
Gate to Source Voltage (Vgs) -8V
Gain 17.6dB
Drain Current-Max (Abs) (ID) 8.8A
Power - Output 250W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 50V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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