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MAGX-002731-100L00

M/A-Com Technology Solutions
RoHS
/
Package Ceramic
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description TRANSISTOR GAN 100W 2.7-3.1GHZ
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Technical Details

Physical

Mount Screw
Package / Case Ceramic
Number of Pins 3

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Bulk
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 95°C
Min Operating Temperature -40°C
Voltage - Rated 65V
Max Power Dissipation 128W
Terminal Position DUAL
Terminal Form FLAT
Current Rating 4.2A
Frequency 2.7GHz~3.1GHz
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 500mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 175V
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) -8V
Gain 12dB
Power - Output 100W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 50V

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