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PTFA192001EV4R0XTMA1

Infineon Technologies
RoHS
/
Package 2-Flatpack, Fin Leads, Flanged
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 30V H-36260-2
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Technical Details

Physical

Package / Case 2-Flatpack, Fin Leads, Flanged
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Strip
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 1.93GHz~1.99GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.6A
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 15.9dB
DS Breakdown Voltage-Min 65V
Power - Output 200W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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