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SD56120M

STMicroelectronics
RoHS
RoHS RoHS compliant
Package M252
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube
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Technical Details

Physical

Mount Screw
Package / Case M252
Number of Pins 5

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Voltage - Rated DC 65V
Max Power Dissipation 236W
Terminal Form FLAT
Current Rating 14A
Frequency 860MHz
Base Part Number SD56120
Pin Count 4
JESD-30 Code R-PDFM-F4
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 236W
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Max Output Power 120W
Drain to Source Breakdown Voltage 65V
Input Capacitance 221pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 32V
Min Breakdown Voltage 65V

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