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Transistors - FETs, MOSFETs - RF
NE3512S02-A

NE3512S02-A

RoHS

/

Package 4-SMD, Flat Leads

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF

Description HJ-FET NCH 13.5DB S02

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Inventory: 9525

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Technical Details

Physical

Mount Surface Mount

Package / Case 4-SMD, Flat Leads

Number of Pins 4

Technical

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 125°C

Min Operating Temperature -65°C

Voltage - Rated 4V

Frequency 12GHz

Base Part Number NE3512

Power Dissipation 165mW

Current - Test 10mA

Transistor Type HFET

Continuous Drain Current (ID) 70mA

Gate to Source Voltage (Vgs) -3V

Gain 13.5dB

Drain to Source Breakdown Voltage 4V

Noise Figure 0.35dB

Voltage - Test 2V

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

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