Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Test 7.5V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 4A
Max Output Power 3W
Gain 12dB
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Transistor Application AMPLIFIER
Current - Test 50mA
Case Connection SOURCE
Power Dissipation 52.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F2
Pin Count 10
Base Part Number PD54003
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 500MHz
Current Rating 4A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 52.8W
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 165°C
ECCN Code EAR99
Number of Terminations 2