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BFG10/X,215

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF Bipolar Transistors Single NPN 8V 250mA 400mW 25
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA

Technical

Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BFG10
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA 5V
Gain 7dB
Voltage - Collector Emitter Breakdown (Max) 8V
Current - Collector (Ic) (Max) 250mA
Frequency - Transition 1.9GHz

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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