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D770N12TXPSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DO-200AA, A-PUK
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 1.2KV 770A
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case DO-200AA, A-PUK
Surface Mount YES
Diode Element Material SILICON

Technical

Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
Terminal Position END
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-CEDB-N2
Operating Temperature (Max) 180°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 30mA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.08V @ 400A
Operating Temperature - Junction -40°C~180°C
Output Current-Max 770A
Application GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 770A
Number of Phases 1
Rep Pk Reverse Voltage-Max 1200V
Non-rep Pk Forward Current-Max 6000A
Reverse Current-Max 30000μA

Compliance

RoHS Status RoHS Compliant

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