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MURTA400120R

GeneSiC Semiconductor
RoHS
RoHS RoHS compliant
Package Three Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE GEN 1.2KV 200A 3 TOWER
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON

Technical

Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 2.6V @ 200A
Case Connection ISOLATED
Operating Temperature - Junction -55°C~150°C
Application SUPER FAST RECOVERY
Voltage - DC Reverse (Vr) (Max) 1200V
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 200A
Number of Phases 1
Non-rep Pk Forward Current-Max 3300A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 25μA
Reverse Recovery Time-Max 0.18μs

Compliance

RoHS Status RoHS Compliant

Alternative Model

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