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MBR60030CTL

GeneSiC Semiconductor
RoHS
/
Package Twin Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE SCHOTTKY 30V 300A 2 TOWER
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON

Technical

Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 30V
Voltage - Forward (Vf) (Max) @ If 580mV @ 300A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 30V
Average Rectified Current 300A
Number of Phases 1
Non-rep Pk Forward Current-Max 4000A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 3000μA

Compliance

RoHS Status RoHS Compliant

Alternative Model

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