RS2G-E3/52T

Vishay Semiconductor Diodes Division

RoHS

RoHS compliant

Package DO-214AA, SMB

Category Discrete Semiconductor Products / Diodes - Rectifiers - Single

Description In a Pack of 25, Vishay 400V 1.5A, Silicon Junction Diode, 2-Pin DO-214AA RS2G-E3/52T

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Inventory: 3186

Minimum: 1

Total Price: USD $0.38

Unit Price: USD $0.37884

≥1 USD $0.37884

≥10 USD $0.321552

≥100 USD $0.2237

Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Contact Plating Tin

Mount Surface Mount

Mounting Type Surface Mount

Package / Case DO-214AA, SMB

Number of Pins 2

Diode Element Material SILICON

Technical

Packaging Tape & Reel (TR)

Published 2009

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Max Operating Temperature 150°C

Min Operating Temperature -55°C

Additional Feature FREE WHEELING DIODE

HTS Code 8541.10.00.80

Capacitance 20pF

Subcategory Rectifier Diodes

Voltage - Rated DC 400V

Terminal Position DUAL

Terminal Form C BEND

Peak Reflow Temperature (Cel) 260

Current Rating 1.5A

Time@Peak Reflow Temperature-Max (s) 30

Base Part Number RS2G

Pin Count 2

Number of Elements 1

Element Configuration Single

Speed Fast Recovery =< 500ns, > 200mA (Io)

Diode Type Standard

Current - Reverse Leakage @ Vr 5μA @ 400V

Output Current 1.5A

Voltage - Forward (Vf) (Max) @ If 1.3V @ 1.5A

Forward Current 1.5A

Operating Temperature - Junction -55°C~150°C

Max Surge Current 50A

Application EFFICIENCY

Forward Voltage 1.3V

Max Reverse Voltage (DC) 400V

Average Rectified Current 1.5A

Number of Phases 1

Reverse Recovery Time 150 ns

Peak Reverse Current 5μA

Max Repetitive Reverse Voltage (Vrrm) 400V

Capacitance @ Vr, F 20pF @ 4V 1MHz

Peak Non-Repetitive Surge Current 50A

Max Forward Surge Current (Ifsm) 50A

Recovery Time 150 ns

Compliance

Radiation Hardening No

REACH SVHC Unknown

RoHS Status ROHS3 Compliant

Lead Free Lead Free

Dimensions

Height 2.44mm

Length 4.57mm

Width 3.94mm

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