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APTGL475SK120D3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 610A 2080W D3
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Inventory: 6195
Minimum: 1
Total Price: USD $633.12
Unit Price: USD $633.116091
≥1 USD $633.116091
≥200 USD $252.616993
≥500 USD $244.176161
≥1000 USD $240.004685

Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 11
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.08kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 2080W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 610A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 24.6nF
Turn On Time 270 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Turn Off Time-Nom (toff) 580 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V
VCEsat-Max 2.2 V
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