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F4100R12KS4BOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 100A
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Pricing & Ordering
Inventory: 5721
Minimum: 1
Total Price: USD $495.36
Unit Price: USD $495.359468
≥1 USD $495.359468
≥200 USD $197.651646
≥500 USD $191.047037
≥1000 USD $187.784021

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -40°C~125°C
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 26
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X26
Number of Elements 4
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 660W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 130A
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A
Turn Off Time-Nom (toff) 390 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.8nF @ 25V

Alternative Model

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