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BSM75GD120DN2BOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 2 LOW POWER ECONO3-1
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X39
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 520W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1.5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 103A
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.1nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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