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VS-GB200TH120U

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 1200V 330A 1316W INT-A-PAK
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.316kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1316W
Input Standard
Collector Emitter Voltage (VCEO) 3.6V
Max Collector Current 330A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 16.9nF
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 200A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 16.9nF @ 30V

Compliance

RoHS Status ROHS3 Compliant

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)

Alternative Model

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