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FF900R12IE4VPBOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1200V 900A 20MW
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Inventory: 222
Minimum: 1
Total Price: USD $537
Unit Price: USD $537.00108
≥1 USD $537.00108

Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C
Published 2002
Series PrimePack?2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 20mW
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 900A
Turn On Time 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 900A
Turn Off Time-Nom (toff) 940 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V

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