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FF1200R12KE3NOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 1200A
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Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 10
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 5kW
Case Connection ISOLATED
Power - Max 5000W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 1.6kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 880 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 1200A
Turn Off Time-Nom (toff) 1140 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 86nF @ 25V

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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